? 2008 ixys all rights reserved - 2 2008046a DSEP12-12B ixys reserves the right to change limits, test conditions and dimensions. symbol conditions characteristic values typ. max. i r ? v r = v rrm t vj = 25c v r = v rrm t vj = 50c 00 0.5 a ma v f ? i f = 5 a t vj = 50c t vj = 25c 2.20 3.25 v v r thjc r thch 0.5 .6 k/w k/w t rr i f = a; v r = 30 v; t vj = 25c -di/dt = 00 a/s 35 ns i rm i f = 25 a; v r = 00 v; t vj = 25c -di f /dt = 00 a/s 3.7 a pulse test: ? pulse width = 5 ms, duty cycle < 2.0% ? pulse width = 300 s, duty cycle < 2.0% data according to iec 60747 and per diode unless otherwise specifed. i fav = 15 a v rrm = 1200 v t rr = 35 ns hiperfred tm epitaxial diode with soft recovery features ? international standard package ? planar passivated chips ? very short recovery time ? extremely low switching losses ? low i rm -values ? soft recovery behaviour ? epoxy meets ul 94v-0 applications ? antiparallel diode for high frequency switching devices ? antisaturation diode ? snubber diode ? free wheeling diode in converters and motor control circuits ? rectifers in switch mode power supplies (smps) ? inductive heating ? uninterruptible power supplies (ups) ? ultrasonic cleaners and welders advantages ? avalanche voltage rated for reliable operation ? soft reverse recovery for low emi/rfi ? low i rm reduces: - power dissipation within the diode - turn-on loss in the commutating switch symbol conditions maximum ratings i frms i favm t c = 20c; rectangular, d = 0.5 35 5 a a i fsm t vj = 45c; tp = 0 ms (50 hz), sine 90 a e as t vj = 25c; non-repetitive i as = 9 a; l = 80 h 8.7 mj i ar v a = .25v r typ.; f = 0 khz; repetitive 0.9 a t vj t vjm t stg -55...+75 75 -55...+50 c c c p tot t c = 25c 95 w m d mounting torque 0.4...0.6 nm weight typical 2 g a c to-220 ac a = anode, c = cathode, tab = cathode c (tab) c a ? v rsm v v rrm v type 200 200 dsep 2-2b c g d j k h f b a m n l q e
? 2008 ixys all rights reserved 2 - 2 2008046a DSEP12-12B ixys reserves the right to change limits, test conditions and dimensions. 375 625 875 1125 1375 250 500 750 1000 1250 1500 0 100 200 300 400 500 1 10 100 1000 10000 0.0 0.4 0.8 1.2 1.6 2.0 t [ms] 0 200 400 600 800 1000 1200 0 20 40 60 80 100 0 100 200 300 400 500 v fr [v] 375 625 875 1125 1375 250 500 750 1000 1250 1500 0 10 20 30 40 50 60 250 500 750 1000 1250 1500 0 1 2 3 4 0 1 2 3 4 0 5 10 15 20 25 30 35 40 i rm [a] q r [nc] i f [a] v f [v] t rr [ns] z thjc [k/w] -di f /dt [a/ p s] dsep 12-12b t j = 25c t j = 125c 150c 250 500 750 1000 1250 1500 0 400 800 1200 1600 2000 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 k f t vj [c] -di f /dt [a/ p s] -di f /dt [a/ p s] -di f /dt [a/ p s] t fr [ns] e rec [j] -di f /dt [a/ p s] i f = 30 a 15 a 7.5 a 7.5 a i rm q rr v fr t fr i f = 30 a 15 a 7.5 a 15 a 7.5 a 15 a i f = 30 a i f = 30 a fig. forward current i f versus v f fig.2 typ. reverse recovery charge q rr versus -di f /dt fig. 3 typ. peak reverse current i rm versus -di f /dt fig.4 dynamic parameters q rr , i rm versus t vj fig. 5 typ. recovery time t rr versus -di f /dt fig. 7 typ. recovery energy e rec versus -di f /dt fig. 6 typ. peak forward voltage v fr and t fr versus -di f /dt fig. 8 transient thermal resistance junction to case
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